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单晶硅材料及半导体

四川维美可金属科技有限公司是国内领先的单晶硅材料和化合物半导体材料供应商。公司产品包括2-12吋直拉、电磁直拉、区熔、中子照射NTD单晶硅片和硅棒等,广泛应用于集成电路及其
他相关高新科技领域的二极管、三极管、分立器件、功率器件、功率场效应管(MOSFET)、绝缘栅双极晶体管(IGBT)等产品的研发和制造。
高品质化合物半导体材料砷化镓GaAs,磷化镓GaP,锑化镓GaSb, 砷化铟InAs,磷化铟InP,锑化铟InSb,碳化硅SiC,氮化镓GaN及碲化镉CdTe,碲锌镉CdZnTe等材料广泛适用于LED或LD通用照明、纳米级半导体集成电路、通讯及振荡功率放大器、光电感应装置、红外探测装置、X射线及伽马射线设备、能量传输装置、宽禁带半导体材料研究,以及新能源汽车研发和制造。
为您提供可靠的产品资源和服务是我们持久追求的目标。

单晶硅

直拉硅片 CZ,区熔硅片 FZ,区熔中照硅片 FZNTD,绝缘衬底硅片 SOI,外延硅片 EPI,集成电路级硅棒,太阳能硅片,太阳能硅棒 2"3"4"5"6"8"12"

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直拉单晶硅片 CZ

2" 4" 6" 8" 12"

CZ Single Crystal Silicon Wafer, with flexible resistivity range and thickness for different sizes, is for diodes, transistors, discrete components fabrication, and for diffusion, epitaxy or semi-insulating advanced wafer processes.

D(50.8-300)mm x

T(180-775)µm

电磁直拉硅片 MCZ

2" 4" 5" 6" 8"

MCZ Single Crystal Silicon Wafer, magnetic field-applied method added, enabling a lower oxygen content and dislocation, also can be used in electronic or photovoltaic industries.

D(50.8-200)mm x

T(180-725)µm

区熔单晶硅片 FZ

2" 3" 4" 5" 6"

FZ Single Crystal Silicon Wafer, introducing vertical floating zone refining technology, mostly for electronic devices fabrication of power rectifier, thyristor, GTO, MOSFET, IGBT.

D(50.8-150)mm x

T(180-675)µm

区熔中照单晶硅片 FZ NTD

2" 3" 4" 5" 6"

FZ NTD Single Crystal Silicon Wafer, with high doping accuracy, high uniformity, small resistivity variation, lower impurity or compensation, is widely used for power rectifier, thyristor, GTO, MOSFET, IGBT electronic devices fabrication.

D(50.8-150)mm x

T(180-675)µm

区熔超高阻硅片 FZ Ultra-high Resistivity

2" 3" 4" 5" 6"

FZ Ultra-high Resistivity Silicon Wafer, with normally over 10000Ω.cm or even higher resistivity and more than 800μs carrier lifetime, ideal for production of particular MOS components or photoelectronic devices, and perfect for scientific R&D projects in universities and colleges.

D(100-150)mm

>10000Ω.cm

外延硅片 EPI

4" 6"

Epitaxial (EPI) Silicon Wafer adopts chemical vapor deposition (CVD) technology, and it can meet advanced requirements in microelectronics, photonics or photovoltaic industries. Homogeneous or heterogeneous epitaxial process is applicable.

D(100-150)mm x

Epi Layer

T(2.5-120)µm

绝缘衬底硅片 SOI

6" 8"

Silicon-on-Insulator is of lower stray capacity, temperature dependency or leakage currents, but a much higher latchup resistance, power efficiency and a more stable radiation frequency during IC components design or manufacturing.

D150/200mm x

Device Layer

T(0.07-100)µm

集成电路级硅棒

2" 3" 4" 5" 6" 8"

IC Grade Silicon Ingot with single crystalline structure can accurately be sliced by wire saw into circular wafer. These wafers are widely used for diode, triode, thyristor manufacturing in IC industry.

D(50.8-200)mm x

L≥150mm

太阳能硅片

6" 8"

Silicon Solar Wafer is proved to be a favorable material for high efficiency energy industry. 125x125mm, 156x156mm and 166x166mm are available.

125x125mm

156x156mm

166x166mm

太阳能硅棒

6" 8" 9.5"

Solar Silicon Ingot with single crystal (mono crystalline) silicon structure. Wafer fabricated from the ingot can serve as a light-absorbing material and energy conversion channel in photovoltaic industry by forming solar cells, panels or PV systems.

125x125mm

156x156mm

166x166mm

单晶锗

锗片 Germanium Wafer,超薄锗片 Ultra Thin Germanium Wafer,锗锭 Germanium Ingot

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单晶锗片 Ge

2" 3" 4" 6"

Single Crystal Germanium Wafer, has doubled the average optical-electric power transmission ability compared to solar grade silicon cells when applied in photovoltaics industry such as solar cell or CPV system. 2" 3" 4" and 6" is available.

D(50.8-150)mm x

T(145/175)µm

区熔锗锭 Ge

2" 3" 4" 6"

Zone-refined Germanium Ingot, silver grey metallic color trapezoid metal poly crystalline ingot, purity over 99.999%, mainly used for fabrication of single crystal Ge ingot or wafer, Si-Ge alloy and other Ge based materials in semiconductor and infrared optical industries. 2" 3" 4" 6" are available.

D(50.8-150)

x L(140-300)mm

化合物半导体

砷化镓 GaAs,锑化镓 GaSb,磷化镓 GaP,锑化铟 InSb,砷化铟 InAs,磷化铟 InP,氮化镓 GaN,碳化硅 SiC,碲化镉 CdTe,碲锌镉 CdZnTe

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砷化镓 GaAs

2" 3" 4" 6"

Gallium Arsenide (GaAs) substrate is formed by high purity Gallium and Arsenic elements, extensively used for LED or LD application in the optoelectronic and microelectronic industries.

ŒD(50.8-150)mm

    x T(350-650)μm

Poly/Single

    Crystal GaAs

锑化镓 GaSb

2" 3" 4"

Gallium Antimonide (GaSb) substrate is compound by high purity Gallium and Antimony elements which can be widely applied for optoelectronics industry. Polycrystalline and mono crystalline of GaSb bar is available.

ŒD(50.8-100)mm

    x T(500-1000)μm

Poly/Single

    Crystal GaSb

磷化镓 GaP

2"

Gallium Phosphide (GaP) is formed by high purity Gallium and Phosphorus, which is widely used for LED industry. Polycrystalline and mono crystalline of GaP bar is available.

ŒD50.8mm

    x T(300-400)μm

Poly/Single

    Crystal GaP

砷化铟 InAs

2" 3" 4"

Indium Arsenide (InAs) substrate is compound by high purity Indium and Arsenic elements which can be adopted in optoelectronics industry. Polycrystalline and mono crystalline of InAs bar is available.

ŒD(50.8-100)mm

    x T(500-800)μm

Poly/Single

    Crystal InAs

锑化铟 InSb

2" 3"

Indium Antimonide (InSb) substrate is compound by high purity Indium and Antimony elements, mostly being used for meteorology civil applications. Polycrystalline and mono crystalline of InSb is available.

ŒD(50.8-76.2)mm

    x T(500-600)μm

Poly/Single

    Crystal InSb

磷化铟 InP

2"

Indium Phosphide (InP) substrate is compound by high purity Indium and Phosphorus elements which can be widely used for Opto-electronic civil industries. Polycrystalline and mono crystalline of InP is available.

ŒD(50.8-100)mm

    x T(300-600)μm

Poly/Single

    Crystal InP

氮化镓 GaN

2" 4" 6"

Gallium Nitride substrate is adopted HVPE and MOCVD growing methods, self free-standing or compound wdafer normally grown on Al2O3 (Sapphire) available, can be widely used for the new type high speed and capacity LED components, power devices and RF devices.

D(50.8/100/150)mm x

T(350/4.5/20)μm

碳化硅 SiC

2" 3" 4" 6"

Silicon Carbide Substrate (SiC), is an outstanding new generation wide bandgap semiconductor with favorable characteristics, which can be widely applied for aeronautics and astronautics, trail transit, photovoltaic and electric power transmission.

D(50.8-150)mm x

T(330-500)μm

碲化镉 CdTe

5N 6N 7N

Cadmium Telluride (CdTe) Substrate is compound of high purity Cadmium and Tellurium, which can be widely used for PIN semiconductor structure, Polycrystalline and mono crystalline of CdTe bar is available.

ŒD(5x5,10x10)mm

    x T(0.5/1/3)mm

Poly/Single

    Crystal CdTe

碲锌镉 CdZnTe (CZT)

5N 6N 7N

Cadmium Zinc Telluride (CdZnTe, CZT), with excellent electrical properties, high absorption coefficient and moderate thermal expansion rate, is widely used for infrared ray guiding components and other civil security applications.

ŒD(10x10, 14x14,

    25x25)mm

Poly/Single

    Crystal CdZnTe

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